LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V

LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz frequency band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. • 30W output power at P1dB (CW) • 12dB minimum gain at P1dB (CW) • W-CDMA typ

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MA-COM

RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V

Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. ■ 30W Output Power at P1dB (CW) ■ 12dB Minimum Gain at P1dB (CW) ■ W-CDMA Typical Performance: (28VDC, -45dBc ACPR @ 4.096MHz)

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MACOM

LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V

MACOM

N/A

MACOM

上传：深圳市启航讯科技有限公司

SOP-8

MICROCHIP/薇芯

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