RADAR PULSED POWER TRANSISTOR

RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10 Duty Cycle FEATURES • Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Em

文件：110.67 Kbytes 页数：1 Pages

MACOM

170 Watts, 38 Volts, 100us, 10 170 Watts, 38 Volts, 100짰, 10

GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

文件：83.34 Kbytes 页数：4 Pages

ADPOW

170 Watts, 38 Volts, 100關s, 10 Radar 2700-2900 MHz

GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10 duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of

文件：111.09 Kbytes 页数：4 Pages

MICROSEMI

美高森美

SOP-8

MICROCHIP/薇芯

上传：深圳市芯峰微电子科技有限公司

SOP-8

MICROCHIP/薇芯

上传：深圳市芯峰微电子科技有限公司