丝印：MAG；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

Gate Driver for 1.2 kV to 3.3 kV Half-Bridge Power Modules Electrical I/O Interface

Product Highlights Highly Integrated, Compact Footprint • Ready-to-use gate driver solution optimized for power modules from 1200 V up to 3300 V blocking voltage • Supporting IGBT, Hybrid (Si-IGBT/SiC-Diode) and Full-SiC MOSFET power modules • Dual channel gate driver • Electrical prima

文件：1.28065 Mbytes 页数：29 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Gate Driver for 1.2 kV to 3.3 kV Half-Bridge Power Modules Electrical I/O Interface

Product Highlights Highly Integrated, Compact Footprint • Ready-to-use gate driver solution optimized for power modules from 1200 V up to 3300 V blocking voltage • Supporting IGBT, Hybrid (Si-IGBT/SiC-Diode) and Full-SiC MOSFET power modules • Dual channel gate driver • Electrical prima

文件：1.28065 Mbytes 页数：29 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128關s Pulse, 10 Duty

Product Description The MAGX-000912-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of

文件：791.84 Kbytes 页数：6 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128關s Pulse, 10 Duty

Product Description The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of

文件：788.79 Kbytes 页数：6 Pages

MA-COM

GaN on SiC Depletion-Mode Transistor Technology

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：861.66 Kbytes 页数：6 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：665.31 Kbytes 页数：8 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：665.31 Kbytes 页数：8 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：665.31 Kbytes 页数：8 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128關s Pulse, 10 Duty

Product Description The MAGX-000912-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of

文件：791.84 Kbytes 页数：6 Pages

MA-COM