MAGX-000912-SB0PPR开发板套件编程器的射频评估开发套件开发板规格书PDF中文资料

Product Description

The MAGX-000912-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

特性 Features

• GaN depletion mode HEMT microwave transistor

• Internally matched  Common source configuration

• Broadband Class AB operation

• RoHS Compliant

• +50V Typical Operation

• MTTF of 114 years (Channel Temperature

Applications

• Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.