MA4VAT2007-1061T

High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz

DescriptionandApplications M/A-COM’sMA4VAT2007-1061TisaHMICPINDiodeVariableAttenuatorwhichutilizesanintegrated90degree3dBhybridwithapairofSiliconPINDiodestoperformtherequiredattenuationfunctionasD.C.Voltage(Current)isapplied. Thisdeviceoperatesfrom0to2.

MA4VAT2007-1061T

High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz

DescriptionandApplications M/A-COM’sMA4VAT2007-1061TisaHMICPINDiodeVariableAttenuatorwhichutilizesanintegrated90degree3dBhybridwithapairofSiliconPINDiodestoperformtherequiredattenuationfunctionasD.C.Voltage(Current)isapplied. Thisdeviceoperatesfrom0to2.

MA4VAT2007-1061T

PIN Diode Voltage Variable; ·RoHs and ELV Compliant\n·18.5 dB Attenuation, (Typ.)\n·2:1 VSWR, (Typ.)\n·2.0 dB Insertion Loss, (Typ.)\n·Usable Bandwidth: 1.50 GHz to 2.50 GHz\n·Covers the following Bands: • DCS • PCS • UMTS/WCDMA/CDMA • TD-S_CDMA • SCDMA •\n·0 - 2.77 Volts Control Voltage @ 3 mA (Typ.)\n·50 dBm Input IP3, (Typ.) (1 MHz Offset, @ + 0 dBm Pinc)\n·23 dB Attenuation, (Typ.)\n·1.4:1 VSWR, (Typ.)\n·1.4 dB Insertion Loss, (Typ.)\n·Bandwidth: 1.70 GHz to 2.00 GHz\n;

MACOM’s MA4VAT2007-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.C. Voltage (Current) is applied. This device operates from 0 to 2.77 Volts at 3.0mA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. MACOM’s MA4VAT2007-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: • Lower Insertion Loss • Lower distortion through attenuation • Large dynamic range for wide spread spectrum applications

MA4VAT2007-1061T

High IIP3 PIN Diode Variable Attenuator

MA4VAT2007-1061T_15

High IIP3 PIN Diode Variable Attenuator