HMIC??Silicon PIN Diode Switch with Integrated Bias Network

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

文件：784.69 Kbytes 页数：6 Pages

MA-COM

HMIC??Silicon PIN Diode Switch

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

文件：781.63 Kbytes 页数：6 Pages

MA-COM

SP4T PIN Diode with Integrated Bias Network

Description The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt dio

文件：270.08 Kbytes 页数：6 Pages

MACOM

HMIC PIN Diode with Bias

The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in ·Broad Bandwidth\n·50 nS Switching Speed\n·Up to +30dBm C.W. Power Handling @ +25°C\n·Glass Encapsulated Chip with Polymer Protective Coating\n·Rugged Fully Monolithic\n·Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs ?\n·Usable from 50 MHz to 26.5 GHz\n;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SP4T 18GHZ DIE

MACOM Technology Solutions

HMIC??Silicon PIN Diode Switch

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

文件：781.63 Kbytes 页数：6 Pages

MA-COM

Broad Bandwidth Specified up to 18 GHz

文件：978.57 Kbytes 页数：6 Pages

MA-COM