HMIC??Silicon PIN Diode Switches with Integrated Bias Network

Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt di

文件：153.31 Kbytes 页数：7 Pages

MA-COM

Broad Bandwidth Specified 2 - 18 GHz

Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt di

文件：705.56 Kbytes 页数：7 Pages

MA-COM

Monolithic Pin Diode Switches with Integrated Bias Network

Description The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series a

文件：879.43 Kbytes 页数：9 Pages

MACOM

HMIC Silicon PIN Diode Switches with Integrated Bias Network

文件：705.56 Kbytes 页数：7 Pages

MA-COM

HMIC PIN Diode with Bias

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes ·Broad Bandwidth Specified 2 to 18 GHz\n·RoHS Compliant\n·Polymer Protective Coating\n·Glass Encapsulate\n·Fully Monolithic Construction\n·Integrated Bias Network\n·Usable up to 26 GHz\n·Low Insertion Loss / High Isolation;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频开关 描述：IC RF SWITCH SP3T 18GHZ DIE

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