SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde

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Med. Barrier Anti-Parallel Si

The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele ·Extremely Low Parasitic Capitance & Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits, N;

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Package：模具；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY,SURMOUNT,ANTI-PAR,MED B

MACOM Technology Solutions

SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde

文件：103.45 Kbytes 页数：4 Pages

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