SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde

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SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con

文件：102.34 Kbytes 页数：4 Pages

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SURMOUNT Low, Medium, & High Barrier Silicon

文件：224.73 Kbytes 页数：5 Pages

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SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde

文件：103.45 Kbytes 页数：4 Pages

MA-COM

SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde

文件：103.45 Kbytes 页数：4 Pages

MA-COM

SURMOUNT™ Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description and ● Extremely Low Parasitic Capitance and Inductance\n● Surface Mountable in Microwave Circuits, No Wirebonds Required\n● Rugged HMIC Construction with Polyimide Scratch Protection\n● Reliable, Multilayer Metalization with a Diffusion\n● Barrier, 100% Stabilization Bake (300°C, 16 hours)\n● Lower ;

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High Barrier Anti-Parallel Si

The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele ·Extremely Low Parasitic Capitance & Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits, N;

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