MA4E2502H

SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

DescriptionandApplications TheMA4E2502SurMountTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottkyDevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process.HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconductorsembed

MA4E2502H

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto

MA4E2502H-1246

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto

MA4E2502H-1246

High Barrier Si Single; ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwavable Circuits, No Wirebonds Required\n;

The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC™ devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multilayer metallization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The “0502” outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2502 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.

MA4E2502H-1246T

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto

MA4E2502H-1246W

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

DescriptionandApplications TheMA4E2502SURMOUNTTMSeriesDiodesareSiliconLow,Medium,andHighBarrierSchottky DevicesfabricatedwiththepatentedHeterolithicMicrowaveIntegratedCircuit(HMIC)process. HMICcircuitsconsistofSiliconpedestalswhichformdiodesorviaconducto

MA4E2502H-1246

Package：模具；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 5V 50MW DIE

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