SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

文件：60.64 Kbytes 页数：3 Pages

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SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：106.71 Kbytes 页数：3 Pages

MACOM

Low Barrier Si Single

The MA4E2501L-1290 SURMOUNT Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low di ·Extremely Low Parasitic Capacitance and Inductance\n·Available in Pocket Tape and Reel\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits. ;

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Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：SCHOTTKY.SURMOUNT,SINGLE,SI

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SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：106.71 Kbytes 页数：3 Pages

MACOM

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

文件：60.64 Kbytes 页数：3 Pages

MA-COM

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

文件：106.71 Kbytes 页数：3 Pages

MACOM

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

文件：60.64 Kbytes 页数：3 Pages

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