MA4E1318

GaAs Flip Chip Anti-Parallel; ·Low Series Resistance\n·Designed for Easy Circuit Insertion\n·Polyimide Scratch Protection\n·Silicon Nitride Passivation\n·High Cutoff Frequency\n·Low Capacitance\n;

MACOM's MA4E1317 single, MA4E1318 antiparallel pair, MA4E1319-1 reverse tee,MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.

MA4E1318

GaAs Flip Chip Schottky Barrier Diodes

MA4E1318

GaAs Flip Chip Schottky Barrier Diodes

MA4E1318

GaAs Flip Chip Schottky Barrier Diodes

MA4E1318

Low Series Resistance

MA4E1318

GaAs Flip Chip Schottky Barrier Diodes

MA4E1318

Package：2-SMD；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE SCHOTTKY 7V

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