MA4E1310

GaAs Flip Chip Single; ·Low Series Resistance\n·Polyimide Scratch Protection\n·Silicon Nitride Passivation\n·High Cutoff Frequency\n·Low Capacitance\n·Designed for Easy Circuit Insertion\n;

MACOM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, automotive radar detectors, etc. This device can be used through 110 GHz.

MA4E1310

GaAs Flip Chip Schottky Barrier Diode

Description M/A-COMsMA4E1310isagalliumarsenideflipchipSchottkybarrierdiode.ThisdiodeisfabricatedonaOMCVDepitaxialwaferusingaprocessdesignedforhighdeviceuniformityandextremelylowparasitics.Thisdeviceisfullypassivatedwithsiliconnitrideandhasanadditionalla

MA4E1310

Package：模具；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：GAAS_FLIP_CHIP

ETC

MA4E2514L-1116

M/A-COM
NA

MA4P1250-1072T

MACOM
SMD/SMT