GaAs Flip Chip Single

MACOM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide ·Low Series Resistance\n·Polyimide Scratch Protection\n·Silicon Nitride Passivation\n·High Cutoff Frequency\n·Low Capacitance\n·Designed for Easy Circuit Insertion;

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GaAs Flip Chip Schottky Barrier Diode

Description M/A-COMs MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional la

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Package：模具；包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：GAAS_FLIP_CHIP

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