Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -800Ma). ● Complementary To M8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

文件：137.04 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR(PNP)

TRANSISTOR (PNP) FEATURES Power dissipation

文件：727.51 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

PNP Plastic Encapsulate Transistor

FEATURES ● Power dissipation

文件：203.66 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：Y21；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -800Ma). ● Complementary To M8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

文件：575.79 Kbytes 页数：1 Pages

LUGUANG

鲁光电子

丝印：Y21；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：1.68982 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -800mA） ● Complementary To M8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

文件：205.18 Kbytes 页数：3 Pages

DSK

丝印：Y21；Package：SOT-23；TRANSISTOR(PNP)

FEATURES Complimentary to M8050 Collector current: IC=0.8A

文件：661.44 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：Y21；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to M8050 • Power Dissipation of 200mW • High Stability and High Reliability MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Position: Any • Marking:Y21

文件：1.47451 Mbytes 页数：5 Pages

JINGHENG

晶恒

Plastic-Encapsulate Transistors

FEATURES Power Dissipation

文件：605.76 Kbytes 页数：2 Pages

YEASHIN

亚昕科技

TRANSISTOR 竊?PNP 竊

文件：34.87 Kbytes 页数：1 Pages

JIANGSU

长电科技