M8050-C

NPN Silicon Plastic-Encapsulate Transistor

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating

M8050-C-AP

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 0.8A TO92

M8050-C-BP

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 0.8A TO92

M8050-D

NPNSiliconPlastic-EncapsulateTransistor

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25°C)ofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •MarkingCode:Y11 •EpoxymeetsUL94V-0flammabilityrating

M8050HQLTIG

GeneralPurposeTransistorsNPNSilicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

M8050S

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●PowerDissipation

M8050T

40V,0.8ANPNPlasticEncapsulateTransistor

FEATURES •Powerdissipation

MAB8050H

SINGLE-CHIP8-BITMICROCONTROLLER

MAF8050H

SINGLE-CHIP8-BITMICROCONTROLLER

MBR8050PT

80AmpereHeatsinkDualCommonCathodeSchottkyBarrierRectifierDiodes

Features Lowforwardvoltagedrop ThinkiSemimaturedplanarprocessschottky Highcurrentcapability Highsurgecurrentcapability Lowreverseleakagecurrent Application Inverter/UPS PlatingPowerSupply/SMPS CarAudioAmplifierandSoundDeviceSystem