DUAL 4-INPUT NAND GATE

DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION I

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STMICROELECTRONICS

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Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes 页数：29 Pages

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Rad-Hard Dual 4-Input NAND Gate

The M54HCxxx and M54HCTxxx series are composed of 90 types of high speed CMOS functions specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interface and several other functions. The radiation • 2 to 6 V operating voltage\n• Low power DC dissipation: 1 μA max. at 25 °C\n• High speed tPD = 8 ns typ. at 25 °C\n• Symmetrical outputs characteristics\n• High noise immunity: 28 % of min. VCC\n• Hermetic packages• Rad-hard 50 krad (Si)\n• SEL immune up to 110 MeV/mg/cm²\n• ESCC qualified\n• ;

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意法半导体

DUAL 4-INPUT NAND GATE

DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION I

文件：232.86 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD DUAL 4-INPUT NAND GATE

文件：104.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD DUAL 4-INPUT NAND GATE

文件：104.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD DUAL 4-INPUT NAND GATE

文件：104.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RAD-HARD DUAL 4-INPUT NAND GATE

文件：104.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体