M45PE10数据手册库存现货意法半导体NUMONYX-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M45PE10	文件：990.86 Kbytes Page：47 Pages	1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：990.86 Kbytes 页数：47 Pages	NUMONYX	NUMONYX
M45PE10	文件：426.82 Kbytes Page：34 Pages	1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：426.82 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10	文件：355.05 Kbytes Page：45 Pages	1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：355.05 Kbytes 页数：45 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10	文件：300 bytes Page：1 Pages	1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface	Micron 美光	Micron
M45PE10-07	文件：355.05 Kbytes Page：45 Pages	1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：355.05 Kbytes 页数：45 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10-VMN6	文件：426.82 Kbytes Page：34 Pages	1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：426.82 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10-VMN6G	文件：990.86 Kbytes Page：47 Pages	1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：990.86 Kbytes 页数：47 Pages	NUMONYX	NUMONYX
M45PE10-VMN6G	文件：426.82 Kbytes Page：34 Pages	1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：426.82 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10-VMN6G	文件：355.05 Kbytes Page：45 Pages	1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：355.05 Kbytes 页数：45 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M45PE10-VMN6P	文件：355.05 Kbytes Page：45 Pages	1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated 文件：355.05 Kbytes 页数：45 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Density：
1Mb
FBGA Code：
N/A
Op. Temp.：
-40C to +85C
Part Family：
M45PE
Part Status：
Obsolete
PLP：
No
PLP Start Date：
N/A
Width：
x1

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	M45PE10	N/A	23+	new	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
上海意淼电子科技有限公司	M45PE10	ST?	26+	SO8N/MLP8?	20000	全新原装假一赔十	询价
深圳市福安瓯科技有限公司	M45PE10VMN6P	ST	25+	SOP-8	2500	强调现货,随时查询!	询价
深圳市恒创达实业有限公司	M45PE10VMN6	Micron	17+	SOP-8	6200		询价
深圳市弘为电子有限公司	M45PE10-VMP6P	ST	24+	SO8(MLP8)	200	原装现货假一罚十	询价
深圳市一线半导体有限公司	M45PE10-MN6P	ST	24+	SOP8	510		询价
千层芯半导体(深圳)有限公司	M45PE10-VMN6TP	ST	24+	原厂原封	6523	进口原装公司百分百现货可出样品	询价
深圳市凌旭科技有限公司	M45PE10-VMP6TG	STM	2016+	SON8	3500	本公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市海天鸿电子科技有限公司	M45PE10-VMN6TP	Micron(ST)	1725+	SOP-8	7500	只做原装进口,假一罚十	询价
上海鑫科润电子科技有限公司	M45PE10-VMV6P	ST	2005+	DFN	100	原装现货海量库存欢迎咨询	询价

更多M45PE10供应商更新时间2026-10-21 15:44:00

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