SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Description The M16C/30L group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions featuring a high

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MSP300

SPECIFICATIONS  Analog Output or 14-Bit Digital Pressure with 11-Bit Temperature Output  One Piece Stainless Steel Construction  Low Cost  17-4PH or 316L Stainless Steel  Customizable FEATURES  One Piece Stainless Steel Construction  Ranges up to 15kpsi  Digital Pressure and T

文件：382.55 Kbytes 页数：7 Pages

TEC

泰科电子

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

RENESAS

瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

RENESAS

瑞萨

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

文件：673.75 Kbytes 页数：26 Pages

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