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M29W800AT80N5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT80N6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT80ZA1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT80ZA5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT80ZA6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90M1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90M5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90M6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90N1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90N5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90N6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90ZA1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90ZA5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800AT90ZA6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B100M1R

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B100M1TR

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B100M5R

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B100M5TR

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800B100M6R

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W800isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M29W800

  • 功能描述:

    闪存 SO-44 1MX8 512KX16

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST
23+
BGA
3220
原装正品公司现货价格优惠欢迎查询
询价
ST
22+
TSSOP-48
3200
十年品牌!原装现货!!!
询价
3000
公司存货
询价
ST
2017+
BGA
32456
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
24+
TSOP
5000
只做原装公司现货
询价
23+
N/A
38160
正品授权货源可靠
询价
ST
22+
TSOP
2960
诚信交易大量库存现货
询价
ST
20+
BGA
11520
特价全新原装公司现货
询价
ST
20+
TSOP
2960
诚信交易大量库存现货
询价
更多M29W800供应商 更新时间2024-5-18 8:00:00