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M29W800DB45N1F

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45N1F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45N1T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45N1T

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45N6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45N6E

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45N6F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45N6F

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45N6T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45N6T

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45ZA1E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZA1F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZA1T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZA6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZA6F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZA6T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZE1E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZE1E

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

M29W800DB45ZE1F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W800DB45ZE1F

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYXNUMONYX

恒忆

详细参数

  • 型号:

    M29W800

  • 功能描述:

    闪存 SO-44 1MX8 512KX16

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST
23+
BGA
3220
原装正品公司现货价格优惠欢迎查询
询价
ST
22+
TSSOP-48
3200
十年品牌!原装现货!!!
询价
3000
公司存货
询价
ST
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
24+
TSOP
5000
只做原装公司现货
询价
ST
22+
TSOP
2960
诚信交易大量库存现货
询价
ST
20+
BGA
11520
特价全新原装公司现货
询价
ST
20+
TSOP
2960
诚信交易大量库存现货
询价
ST
23+
TSOP
3000
全新原装、诚信经营、公司现货销售!
询价
ST
BGA
68900
原包原标签100%进口原装常备现货!
询价
更多M29W800供应商 更新时间2024-6-1 14:40:00