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M29W800DB45N1T中文资料PDF规格书
M29W800DB45N1T规格书详情
Description
The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.
Features
■ Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and read
■ Access times: 45, 70, 90 ns
■ Programming time
– 10 µs per byte/word typical
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
– Read and program another block during erase suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
micron(镁光) |
23+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
MICRON/美光 |
22+ |
TSOP48 |
3785 |
绝对原装公司现货! |
询价 | ||
ST |
2023+ |
TSOP48 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
12+ |
TSOP-48 |
3200 |
原装现货/特价 |
询价 | ||
ST |
TSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
MICRON/美光 |
22+ |
NA |
8000 |
中赛美只做原装 只有原装 |
询价 | ||
MICRON/美光 |
23+ |
9920 |
原装正品,支持实单 |
询价 | |||
Micron |
21+ |
48TSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
STMicroelectronics |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 |