M29W800B说明书PDF资料供应代理意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29W800B	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M1R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M1TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M5R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M5TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M6R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100M6TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100N1R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100N1TR	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800B100N5R	文件：233.14 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：233.14 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛特兴科技有限公司	M29W800B	ST	23+	SSOP	16900	正规渠道,只有原装!	询价
深圳市腾亿芯科技有限公司	M29W800B	ST	25+	SSOP	20000	原装，请咨询	询价
深圳市盈慧通电子有限公司	M29W800B	ST	2511	SSOP	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市中飞凌科技有限公司	M29W800B	ST	26+	SSOP	60000	只有原装可配单	询价
深圳市清腾科技有限公司	M29W800B	ST	25+	SSOP	20000	原装	询价
深圳市福田区绿盛电子商行	M29W800B-90N1	ST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	M29W800B-100N1	ST	24+	TSSOP	120		询价
深圳市欧立现代科技有限公司	M29W800B-100N1	ST	26+		12	原装现货,可开13%税票	询价
深圳市豪迈兴电子有限公司	M29W800B-70N6	ST	2602+	SSOP48	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市赛尔通科技有限公司	M29W800B-70N6	ST	23+	TSOP	65480		询价

更多M29W800B供应商更新时间2026-10-4 11:01:00

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