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首页 >M29W800>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M29W800AB120M1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120M5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120M6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120N1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120N5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120N6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120ZA1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120ZA5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB120ZA6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W800AB80M1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int 文件：234.79 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市恒创达实业有限公司	M29W800DB45N6E	Micron	17+		6200		询价
深圳市一线半导体有限公司	M29W800DB45N6E	NUM	24+		182		询价
深圳市卓越微芯电子有限公司	M29W800DB45N6E	Micron	25+		50000	百分百原装正品真实公司现货库存本公司只做原装可	询价
瀚佳科技(深圳)有限公司	M29W800DB45N6E	Micron Technology Inc.	24+	48-TSOP	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	M29W800DB45N6E	Micron	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	M29W800DB45N6E	MICRON/美光	2447	TSOP-48	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	M29W800DB45N6E	MICRON	25+	TSOP-48	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	M29W800DB45N6E	STMicroelectronics	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市正纳电子有限公司	M29W800DB45N6E	micron(镁光)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市河锋鑫科技有限公司	M29W800DB45N6E	Micron	22+	48TSOP	9000	原厂渠道,现货配单	询价

更多M29W800供应商更新时间2025-11-8 16:00:00

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