128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

Parallel NOR Flash Embedded Memory

文件：841.56 Kbytes 页数：76 Pages

Micron

美光

128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory

文件：1.86249 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

Description The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

文件：1.7868 Mbytes 页数：94 Pages

NUMONYX