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M29F800D

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M1E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M1F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M1T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M6F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55M6T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55N1E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

M29F800DB55N1F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

Summary description The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a RO

文件:332.85 Kbytes 页数:39 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    8Mb (1M x 8,512K x 16)

  • 写周期时间 - 字,页:

    55ns

  • 访问时间:

    55ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    4.5V ~ 5.5V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

供应商型号品牌批号封装库存备注价格
24+
3000
公司存货
询价
ST
16+
BGA
4000
进口原装现货/价格优势!
询价
ST
SOP44
0631+
320
全新原装进口自己库存优势
询价
ST
25+
SOP-44
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
0240+
TSOP
9
原装
询价
ST
25+
SOP
4650
询价
ST
24+
12
原装现货,可开13%税票
询价
ST
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
16+
SOP
86
全新原装现货
询价
EON
24+
TSSOP48
4608
原装现货假一罚十
询价
更多M29F800D供应商 更新时间2025-10-8 16:01:00