M29F400B技术资料参数贸易商意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F400B	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M1R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M1TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M3R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M3TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M6R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120M6TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120N1R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120N1TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400B-120N3R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
4Mb （512K x 8，256K x 16）
写周期时间 - 字，页：
45ns
访问时间：
45ns
存储器接口：
并联
电压 - 电源：
4.5V ~ 5.5V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装
封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
供应商器件封装：
48-TSOP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	M29F400B	ST	01+	TSSOP	400	原装	询价
上海凌岳电子科技有限公司（上海涵恩科技）	M29F400B	ST	2023+	TSSOP	3000	进口原装现货	询价
深圳市正迈科技有限公司	M29F400BB55M1	ST	23+	DIP	20000	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市卓越微芯电子有限公司	M29F400BT-70N1	ST	25+	TSOP	1344	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市福安瓯科技有限公司	M29F400BT-70	N/A	25+	TSOP	1000	强调现货,随时查询!	询价
深圳市毅创腾电子科技有限公司	M29F400BB-55M6T	ST		SOP	241	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	M29F400BT90N1	STM	24+		2000	本站现库存	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M29F400BB-55N1	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市欧立现代科技有限公司	M29F400BT70M3	ST	24+	SOP	6980	原装现货,可开13%税票	询价
深圳市联世界科技有限公司	M29F400B-90NI	ST	24+/25+	SOP	1000	原装正品现货库存价优	询价

更多M29F400B供应商更新时间2025-12-12 16:01:00

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