M29F040技术资料参数供应代理第6页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F040-150XK1TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK3R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK3TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK5R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK5TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK6R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XK6TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XN1R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XN1TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-150XN3R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
4Mb （512K x 8）
写周期时间 - 字，页：
45ns
访问时间：
45ns
存储器接口：
并联
电压 - 电源：
4.5V ~ 5.5V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装
封装/外壳：
32-LCC（J 形引线）
供应商器件封装：
32-PLCC（11.35x13.89）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	M29F040B-90KI	ST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市福安瓯科技有限公司	M29F040B-70K6	ST	25+	PLCC	3600	强调现货,随时查询!	询价
深圳市荣泽信电子科技有限公司	M29F040B70K6	ST	23+		50	全新原装正品现货,价优	询价
深圳市欧立现代科技有限公司	M29F040B-55K1	ST	24+		12	原装现货,可开13%税票	询价
深圳市联世界科技有限公司	M29F040B-90K6	SGS	24+/25+		748	原装正品现货库存价优	询价
深圳市毅创腾电子科技有限公司	M29F040B-70K6	ST	23+	PLCC	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市豪迈兴电子有限公司	M29F040B-90PC	AMD	24+	DIP	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市益百分电子有限公司	M29F040BB55N1	ST	04+	TSOP32	746	全新原装进口自己库存优势	询价
深圳市凌旭科技有限公司	M29F040B-70K6	ST	2016+	PLCC	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	M29F040B-70N6E	ST	25+	TSOP	76	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多M29F040供应商更新时间2026-4-17 17:10:00

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