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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F002B-120XN6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XP1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XP6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70P1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
2Mb （256K x 8）
写周期时间 - 字，页：
70ns
访问时间：
70ns
存储器接口：
并联
电压 - 电源：
4.5V ~ 5.5V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
32-LCC（J 形引线）
供应商器件封装：
32-PLCC（11.35x13.89）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	M29F002BT-45K1	STM	25+	PLCC32	1500	原装现货热卖中,提供一站式真芯服务	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M29F002BT-120K1	ST	25+	PLCC	18000	原厂直接发货进口原装	询价
深圳市益百分电子有限公司	M29F002BB70N1	ST	TSOP32	0349+	493	全新原装进口自己库存优势	询价
深圳市弘为电子有限公司	M29F002BT-45K1	ST	24+	PLCC	2	原装现货假一罚十	询价
深圳市凌旭科技有限公司	M29F002BT-70K6E	ST	2016+	PLCC	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市毅创腾电子科技有限公司	M29F002BT-90K1	ST		PLCC32	104	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	M29F002BB70K6E	NUM	24+		14		询价
深圳市联世界科技有限公司	M29F002BT	ST	24+/25+	PLCC	1000	原装正品现货库存价优	询价
深圳市恒创达实业有限公司	M29F002BT-120K1	ST	17+	PLCC	6200	100%原装正品现货	询价
深圳市卓越微芯电子有限公司	M29F002BT-70K6	ST	25+	PLCC-32	11	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多M29F002B供应商更新时间2025-12-10 15:21:00

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