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M28W640CB90ZB6T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT80N1T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT80N6T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT80ZB1T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT80ZB6T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT90N1T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT90N6T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT90ZB1T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

M28W640CT90ZB6T

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

文件:393.67 Kbytes 页数:54 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    64Mb (4M x 16)

  • 写周期时间 - 字,页:

    70ns

  • 访问时间:

    70ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

供应商型号品牌批号封装库存备注价格
ST
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
ST
25+
原厂原封
16900
原装,请咨询
询价
ST
26+
NA
60000
只有原装 可配单
询价
ST
25+
BGA
3386
品牌专业分销商,可以零售
询价
K存
23+
BGA
2500
绝对全新原装!现货!特价!请放心订购!
询价
ST
25+
TFBGA64
384
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
25+
标准封装
18000
原厂直接发货进口原装
询价
ST
24+
SOP
6980
原装现货,可开13%税票
询价
ST
24+/25+
BGA
1000
原装正品现货库存价优
询价
更多M28W640供应商 更新时间2026-1-18 15:01:00