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M28W320ECT

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

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M28W320ECT10N1

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N1E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N1T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N6

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N6E

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N6F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10N6T

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

M28W320ECT10ZB1

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

文件:832.92 Kbytes 页数:53 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    32Mb (2M x 16)

  • 写周期时间 - 字,页:

    70ns

  • 访问时间:

    70ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    47-TFBGA

  • 供应商器件封装:

    47-TFBGA(6.39x6.37)

供应商型号品牌批号封装库存备注价格
ST
25+
BGA
18000
原厂直接发货进口原装
询价
SGS
24+
BGA
1050
询价
ST
25+
BGA-M47P
2560
绝对原装!现货热卖!
询价
SGS
23+
BGA
6500
绝对全新原装!现货!特价!请放心订购!
询价
ST
04/05+
BGA
13556
全新原装100真实现货供应
询价
ST
2004+
BGA6.37*6.39
280
原装现货海量库存欢迎咨询
询价
STM
23+
TFBGA47
8560
受权代理!全新原装现货特价热卖!
询价
STM
25+23+
New
33570
绝对原装正品现货,全新深圳原装进口现货
询价
Numonyx/STMi
23+
47-TFBGA
65480
询价
Micron Technology Inc.
21+
84-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
更多M28W320ECT供应商 更新时间2025-10-12 12:14:00