丝印：M2；Package：DO-214AC；Surface Mount General Purpose Rectifier M1G Through M7G

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.3526 Mbytes 页数：3 Pages

RFE

RFE international

丝印：M2；Package：SMAF；Surface Mount General Purpose Silicon Rectifiers

文件：472.54 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：MDDM2；Package：DO-214AC；SURFACE MOUNT GENERAL RECTIFIER

文件：580.69 Kbytes 页数：3 Pages

CHENDA

辰达半导体

丝印：M2；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M2；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：750.75 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M2；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V

文件：181.62 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：180.98 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：XSON6；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.9 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V (5

文件：200.39 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

Infineon

英飞凌

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

Infineon

英飞凌