丝印：MDDM2；Package：DO-214AC；SURFACE MOUNT GENERAL RECTIFIER

文件：580.69 Kbytes 页数：3 Pages

CHENDA

辰达半导体

丝印：M2；Package：SMAF；Surface Mount General Purpose Silicon Rectifiers

文件：472.54 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：M2；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：750.75 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：M2；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V

文件：181.62 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input AND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：180.98 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：M2；Package：TSNP-10-9；Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

文件：118.84 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：M2；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP

丝印：M2；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：73.09 Kbytes 页数：11 Pages

PHI

PHI

丝印：M2；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIA

安世