256 K x 16 DRAM EDO PAGE MODE

文件：375 Kbytes 页数：15 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

256 K x 16 DRAM EDO PAGE MODE

文件：375 Kbytes 页数：15 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

256 K x 16 DRAM EDO PAGE MODE

文件：389.53 Kbytes 页数：16 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

256 K x 16 DRAM EDO PAGE MODE

文件：389.53 Kbytes 页数：16 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

256 K x 16 DRAM EDO PAGE MODE

文件：389.53 Kbytes 页数：16 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

magnet

MEDER

丝印：M115；Package：MG-WDSON-5；MOSFET OptiMOS™5, 150 V

Features Lead free, ultra thin double sided cooling package Excellent gate charge x Ros(on) product (FOM) Very low on -resistance Ros(on) N-channel normal level 100 avalanche tested

文件：1.74566 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：M1117120；Package：TO-252(KVU)；LM1117-Q1 18V, 1A, Automotive, Fixed-Output Linear Voltage Regulator

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • Input voltage range VIN: – Absolute maximum: 20V – Operating range: 2.5V to 18V • Output voltage range VOUT: – 1.2V, 3.3V, 5V, 12V fixed –

文件：2.62747 Mbytes 页数：32 Pages

TI

德州仪器

丝印：M11L60；Package：LFPAK33；N-channel 60 V 11.3 m廓 logic level MOSFET in LFPAK33

文件：768.23 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：M11S60；Package：LFPAK33；N-channel 60 V 11.3 m廓 standard level MOSFET in LFPAK33

文件：768.8 Kbytes 页数：13 Pages

NEXPERIA

安世