Power Transducer Series LT-UNIT

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MSYSTEM

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RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

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MOTOROLA

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AIGAAS INFRARED EMITTING DIODE

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PLASTIC SILICON PHOTOTRANSISTOR

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