高压超结VDMOS

Lonten

龙腾半导体

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.56 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Worldwide best RDS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topolog

文件：260.779 Kbytes 页数：10 Pages

Infineon

英飞凌