MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

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MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

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MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

文件：285.63 Kbytes 页数：1 Pages

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

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LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET

FEATURES • LOW NOISE en = 8nV/√Hz TYP. • LOW LEAKAGE IG = 10pA TYP. • LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. • LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.

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Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

The LS840 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS840 features a 5-mV offset and 5-µV/°C drift. The 8 Pi

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LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET

FEATURES • LOW NOISE en = 8nV/√Hz TYP. • LOW LEAKAGE IG = 10pA TYP. • LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. • LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.

文件：32.58 Kbytes 页数：2 Pages

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