丝印：LR；Package：X1SON；TPD1E01B04-Q1 Automotive 0.2-pF, 짹3.6-V, 짹15-kV ESD Protection Diode in 0402 Package

文件：1.52437 Mbytes 页数：21 Pages

TI

德州仪器

丝印：LR；Package：DFN0603；1-Line Bi-directional TVS Diode

文件：1.76154 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00476 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00463 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00444 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

文件：785.8 Kbytes 页数：5 Pages

BYCHIP

百域芯

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.04325 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：162.2 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：304.82 Kbytes 页数：10 Pages

IRF

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：328.44 Kbytes 页数：13 Pages

IRF