N and P-Channel Enhancement Power MOSFET

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-f · Trench Technology\n· NMOS:\n·VNDS=20V, IND=12A\n·RNDS(ON) < 26mΩ @ VGS=2.5V\n·RNDS(ON) < 20mΩ @ VGS=4.5V\n· PMOS:\n·VPDS=-20V, IPD=-4.5A\n·RPDS(ON) < 100mΩ @ VGS=-2.5V\n·RPDS(ON) < 68mΩ @ VGS=-4.5V\n· Super high density cell design\n· Extremely Low Threshold Voltage\n· Small package SOP-8;

LPSemi

微源半导体

Super high density cell design

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POWER

微源半导体

Highly compliant to accommodate wide co-planarity variations

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IRONWOOD

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

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Snap Rivets

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Heyco

Snap Rivets

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Heyco