30V/4A P-Channel Enhancement Mode Field Effect Transistor

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, no · -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V\n· ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V\n· ■ Super high density cell design for extremely low RDC(ON)\n· ■ SOT23 Package;

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30V/4A P-Channel Enhancement Mode Field Effect Transistor

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