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型号	下载订购	功能描述	制造商上传企业	LOGO
LP750	文件：34.36 Kbytes Page：2 Pages	0.5 W POWER PHEMT DESCRIPTION AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 750 mm Schottky barrier gate. The recessed “mushroom” gate structure minim 文件：34.36 Kbytes 页数：2 Pages	FILTRONIC	FILTRONIC
LP750P100	文件：49.27 Kbytes Page：3 Pages	PACKAGED 0.5 WATT POWER PHEMT DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure minim 文件：49.27 Kbytes 页数：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 页数：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89-1	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 页数：3 Pages	FILTRONIC	FILTRONIC
LP750SOT89-2	文件：43.89 Kbytes Page：3 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m 文件：43.89 Kbytes 页数：3 Pages	FILTRONIC	FILTRONIC
LP750P100	文件：300 bytes Page：1 Pages	PACKAGED 0.5 WATT POWER PHEMT DESCRIPTION AND APPLICATIONS\nThe LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes ♦ 41 dBm IP3 at 12 GHz\n♦ 27.5 dBm P-1dB at 12 GHz\n♦ 10.5 dB Power Gain at 12 GHz\n♦ 2.5 dB Noise Figure at 12 GHz\n♦ 60% Power-Added-Efficiency ;	Filtronic	Filtronic
LP750SOT89	文件：300 bytes Page：1 Pages	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT	Filtronic	Filtronic
LP750SOT89-1	文件：300 bytes Page：1 Pages	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT	Filtronic	Filtronic

技术参数

Device Marking：
LP7507
VDSS (V)：
60
VGS(V)：
20
ID (A) @TA：
17
ID (A) @TC：
105
VGSth Min (V)：
1.6
VGSth Max (V)：
2.4
td(on) (ns)：
28
td(off) (ns)：
158
RDS（ON）Max @VGS/IDS (mΩ)：
7
VGS/IDS (V)/(A)：
10/6
Package：
DFN5060-8B
Polarity：
P-Channel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	LP750	FILTRONIC	24+	SOT-89	8200	新进库存/原装	询价
齐创科技(上海,北京,青岛)有限公司	LP750	TOSHIBA	23+	SOT363	5000	原装正品,假一罚十	询价
深圳市华斯顿科技有限公司	LP750	FILTRONIC	25+23+	SOT89	28680	绝对原装正品现货,全新深圳原装进口现货	询价
深圳诚思涵科技有限公司	LP750	FILTRONIC	19+	SOT89	20000	61780	询价
深圳市华睿芯科技有限公司	LP750	FILTRONIC	24+	SOT89	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市亿智腾科技有限公司	LP750	FILTRONIC	24+	SOT89	18560	假一赔十全新原装现货特价供应工厂客户可放款	询价
贸泽芯城（深圳）电子科技有限公司	LP750	FILTRONIC	23+	SOT892	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	LP750	FILTRONIC	02+	SOT-89	2000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科翼源电子有限公司	LP750	FILTRONIC	23+	SOT-89	4500	原厂原装正品	询价
深圳市晨豪科技有限公司	LP750	FILTRONIC	23+	SOT-89	89630	当天发货全新原装现货	询价

更多LP750供应商更新时间2026-1-18 15:30:00

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