平面VDMOS

Lonten

龙腾半导体

N-Channel MOSFET 650V, 10.0A, 1.0(ohm)

文件：931.63 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 650V, 10.0A, 1.0(ohm)

文件：931.63 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.58 Kbytes 页数：2 Pages

ISC

无锡固电