平面VDMOS

Lonten

龙腾半导体

N-Channel MOSFET 600V, 10A, 0.7(ohm)

文件：757.03 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 600V, 10A, 0.7(ohm)

文件：757.03 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.72 Kbytes 页数：2 Pages

ISC

无锡固电