GaAs infrared light emitting diode For optical control systems

GaAs infrared light emitting diode For optical control systems ■ Features • High-power output, high-efficiency: Ie = 9 mW/sr (min.) • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (t

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 9 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 20 deg. (

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 10 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● High center radiant intensity

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 4.5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Narrow directivity :

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 10 mW (typ.) ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● TO-18 standard type package

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GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features • High-power output, high-efficiency • Light-emitting pattern of almost point source • Ultra-miniature, thin side-view type package

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● Wide directivity : θ = 22 deg. (typ.) ● Transparent epoxy resin package

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GaAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features ● High-power output, high-efficiency: PO = 15 mW (min.) ● Fast response and high-speed modulation capability: fC = 30 MHz (typ.) ● Transparent epoxy resin package

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Unconditionally stable

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