丝印：LNA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：LNA；Package：LFCSP_WD；800 mA Ultralow Noise, High PSRR, RF Linear Regulator

文件：801.26 Kbytes 页数：24 Pages

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亚德诺

丝印：LNA；Package：LFCSP_WD；800 mA Ultralow Noise, High PSRR, RF Linear Regulator

文件：801.26 Kbytes 页数：24 Pages

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亚德诺

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency ● Emitted light spectrum suited for silicon photodetectors ● Infrared light emission close to monochromatic light : λP = 950 nm ● Ultra-miniature, thin side-view type package

文件：41.83 Kbytes 页数：2 Pages

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

文件：54.78 Kbytes 页数：3 Pages

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GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems ■ Features • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type package • Long lifetime, high reliability

文件：21.54 Kbytes 页数：1 Pages

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GaAs Bi-directional Infrared Light Emitting Diode

GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR (VHS System) Features ● Two-way directivity ● High-power output, high-efficiency : PO = 1.8 mW (min.) ● Small resin package ● Long lifetime, high reliability ● Thin type package modified from LN59 Applications ● Lig

文件：43.96 Kbytes 页数：2 Pages

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GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package

文件：40.23 Kbytes 页数：2 Pages

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Good radiant power output linearity with respect to input current ● Long lifet

文件：40.41 Kbytes 页数：3 Pages

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GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 9 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Transparent epoxy resin package ● Long lead-wire type

文件：40.43 Kbytes 页数：2 Pages

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