GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 10 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● High center radiant intensity

文件：40.35 Kbytes 页数：2 Pages

PANASONIC

松下

GaAs Infrared Light Emitting Diode

Panasonic

松下

Package：T 1 3/4；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 950NM 100MA T 1 3/4

PANASONIC

松下

ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS

文件：287.09 Kbytes 页数：9 Pages

TI

德州仪器

Ultra-Low Power Dual Operational Amplifiers

1 Features 1• Low Supply Current: 54 μA (Typical) • Low Offset Voltage: 2 mV (Typical) • Low Input Bias Current: 2 nA (Typical) • Input Common-Mode to GND • Wide Supply Voltage: 3 V

文件：770.78 Kbytes 页数：22 Pages

TI

德州仪器

ULTRA-LOW-POWER DUAL OPERATIONAL AMPLIFIERS

文件：144.22 Kbytes 页数：6 Pages

TI

德州仪器