Low Noise Amplifier LNA (Size: 1.25\"x1.25\"x0.56\")

RFBAY

LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET

FEATURES • LOW NOISE en = 8nV/√Hz TYP. • LOW LEAKAGE IG = 10pA TYP. • LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. • LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.

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LINEAR

Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

The LS840 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS840 features a 5-mV offset and 5-µV/°C drift. The 8 Pi

文件：283.64 Kbytes 页数：1 Pages

MICROSS

MONOLITHIC DUAL N-CHANNEL JFET

文件：283.64 Kbytes 页数：1 Pages

MICROSS