600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

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600V, Triple N-Channel MOSFET with Common Gate Control

The LN60A01 is a three channel, 600V N-Channel, enhancement mode power FET manufactured in MPS's proprietary, high-voltage DMOS technology.?This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switching performance, and withstand high energy pul ● 600V Breakdown Voltage \n● Three N-Channel MOSFETs \n● One Gate control to All Three FETs \n● Rds(on)=200O at Vgs=10V \n● Switching Current>0.1A \n● Fast Switching;

MPS

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丝印：LN60A01E；Package：PDIP-8；600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

美国芯源

丝印：LN60A01E；Package：SOIC-8；600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

美国芯源