丝印：LMG3614NNNNC；Package：VQFN；LMG3614 650V 170mΩ GaN FET With Integrated Driver

1 Features • 650V 170mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55μA • Maximum supply and input logic pin voltage: 26V • 8mm × 5.3mm QFN package w

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