LMG342xR030 600-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

文件：1.2996 Mbytes 页数：35 Pages

TI

德州仪器

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.83559 Mbytes 页数：45 Pages

TI

德州仪器

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes 页数：45 Pages

TI

德州仪器

丝印：LMG3425R030；Package：VQFN；LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes 页数：45 Pages

TI

德州仪器

丝印：LMG3425R030；Package：VQFN；LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes 页数：45 Pages

TI

德州仪器

具有集成驱动器、保护和温度报告功能以及理想二极管模式的 600V 30mΩ GaN FET

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.\n\nThe LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results • Qualified for JEDEC JEP180 for hard-switching topologies\n• Integrated high precision gate bias voltage\n• 2.2-MHz switching frequency\n• Operates from +12-V unregulated supply\n• Robust protection \n• Advanced power management \n• Ideal diode mode reduces third-quadrant losses in LMG3425R030;

TI

德州仪器

Package：54-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：600-V 30-M GAN FET WITH INTEGRAT

TI

德州仪器