LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.79579 Mbytes 页数：55 Pages

TI

德州仪器

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.90108 Mbytes 页数：59 Pages

TI

德州仪器

LMG342xR030 600-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

文件：1.2996 Mbytes 页数：35 Pages

TI

德州仪器

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.83559 Mbytes 页数：45 Pages

TI

德州仪器

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes 页数：45 Pages

TI

德州仪器

丝印：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.90108 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.79579 Mbytes 页数：55 Pages

TI

德州仪器

丝印：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.79579 Mbytes 页数：55 Pages

TI

德州仪器

丝印：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.90108 Mbytes 页数：59 Pages

TI

德州仪器

丝印：LMG3422R030；Package：VQFN；LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.83559 Mbytes 页数：45 Pages

TI

德州仪器