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FBR6035

60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions

Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0

FCI

Amphenol ICC

FDB6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035AL

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=46A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6035AL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FDP6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6035L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQ6035

AllQuartzSMDCrystal

FOX

Fox Electronics

FQ6035A

AllQuartzSMDCrystal

FOX

Fox Electronics

FQ6035B

AllQuartzSMDCrystal

FOX

Fox Electronics

FST6035

SchottkyPowermod

MicrosemiMicrosemi Corporation

美高森美美高森美公司

FST6035

SchottkyPowerMod

●SchottkyBarrierRectifier ●GuardRingforReverseProtection ●VRRM35to50Volts ●Highsurgecapacity ●ReverseEnergyTested ●ROHSCompliant

MicrosemiMicrosemi Corporation

美高森美美高森美公司

H6035NL

SMTCOMMONMODECHOKES

pulse

Pulse Electronics

HC6035

QuartzSMD,Ceramic

AURISauris-GmbH

auris-GmbH

HC6035

QuartzSMD,Ceramic

AURISauris-GmbH

auris-GmbH

HE6035

QuartzSMD,Epoxy

AURISauris-GmbH

auris-GmbH

详细参数

  • 型号:

    LMC6035ITL/NOPB

  • 功能描述:

    运算放大器 - 运放 2.7V Dual RRO CMOS Op amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 通道数量:

    4

  • 共模抑制比(最小值):

    63 dB

  • 输入补偿电压:

    1 mV

  • 输入偏流(最大值):

    10 pA

  • 工作电源电压:

    2.7 V to 5.5 V

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    QFN-16

  • 转换速度:

    0.89 V/us

  • 关闭:

    No

  • 输出电流:

    55 mA

  • 最大工作温度:

    + 125 C

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
13384
SOP-8
1301
美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现
询价
TI/德州仪器
22+
DSBGA-8
680000
欢迎来电咨询 只做原装
询价
Texas Instruments
24+
8-WFBGA,DSBGA
25000
in stock线性IC-原装正品
询价
TI正品原装
21+
DSBGA-8
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NS
21+
8DSBGA
9800
只做原装正品假一赔十!正规渠道订货!
询价
TI
22+
DSBGA-8
65568
代理授权直销,原装现货,长期稳定供应
询价
TI(德州仪器)
2022+原装正品
uSMD-8(1.72x1.87)
18000
支持工厂BOM表配单 公司只做原装正品货
询价
TI(德州仪器)
23+
DSBGA8
22423
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI(德州仪器)
23+
DSBGA8
26691
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ns
23+
8-MicroSMD
9823
询价
更多LMC6035ITL/NOPB供应商 更新时间2024-5-22 15:08:00